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For a metal/oxide/p-type silcion MOS capacitor, when the MOS capacitor is under weak inversion, the electron concentraion at the silicon surface is higher than the hole concentration in the bulk silcion.
For a metal/oxide/p-type silcion MOS capacitor, when the MOS capacitor is under weak inversion, the electron concentraion at the silicon surface is higher than the hole concentration in the bulk silcion.
A、正确
B、错误
